VEMD6110X01 www.vishay.com vishay semiconductors rev. 1.1, 03-jul-15 1 document number: 84179 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 silicon pin photodiode description VEMD6110X01 is a high speed and high sensitive pin photodiode. it is a small surface mount device (smd) including the chip with a 0.85 mm 2 sensitive area and a daylight blocking filter matched with ir emitters operating at wavelength of 830 nm to 950 nm. features ? package type: surface mount ? package form: 1206 ? dimensions (l x w x h in mm): 4 x 2 x 1.05 ? radiant sensitive area (in mm 2 ): 0.85 ? high photo sensitivity ? high radiant sensitivity ? daylight blocking filter matched with 830 nm to 950 nm emitters ? fast response times ? angle of half sensitivity: ? = 60 ? floor life: 72 h, msl 4, acc. j-std-020 ? lead (pb)-free re flow soldering ? aec-q101 qualified ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 applications ? high speed photo detector note ? test conditions see table basic characteristics note ? moq: minimum order quantity product summary component i ra (a) ? (deg) 0.5 (nm) VEMD6110X01 9.5 60 750 to 1050 ordering information ordering code packaging remarks package form VEMD6110X01 tape and reel moq: 3000 pcs, 3000 pcs/reel 1206 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 32 v power dissi pation t amb 25 c p v 215 mw junction temperature t j 110 c operating temperature range t amb -40 to +110 c storage temperature range t stg -40 to +110 c soldering temperature acc. reflow solder profile fig. 8 t sd 260 c thermal resistance juncti on/ambient acc. j-std-051 r thja 270 k/w
VEMD6110X01 www.vishay.com vishay semiconductors rev. 1.1, 03-jul-15 2 document number: 84179 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - reverse dark current vs. ambient temperature fig. 2 - relative reverse light current vs. ambient temperature fig. 3 - reverse light current vs. irradiance fig. 4 - reverse light current vs. reverse voltage basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 50 ma v f 1v breakdown voltage i r = 100 a, e = 0 v (br) 32 v reverse dark current v r = 10 v, e = 0 i ro 13na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 12 pf v r = 5 v, f = 1 mhz, e = 0 c d 3.6 pf open circuit voltage e e = 1 mw/cm 2 , = 950 nm v o 356 mv temperature coefficient of v o e e = 1 mw/cm 2 , = 950 nm tk vo -3.1 mv/k short circuit current e e = 1 mw/cm 2 , = 950 nm i k 9a temperature coefficient of i k e e = 1 mw/cm 2 , = 950 nm tk ik 0.1 %/k reverse light current e e = 1 mw/cm 2 , = 950 nm, v r = 5 v i ra 6.7 9.5 12.4 a angle of half sensitivity ? 60 deg wavelength of peak sensitivity p 950 nm range of spectral bandwidth 0.5 750 1050 nm rise time v r = 10 v, r l = 1 k , = 820 nm t r 100 ns fall time v r = 10 v, r l = 1 k , = 820 nm t f 100 ns 20 1 10 100 1000 i ro - reverse dark current (na) t amb - ambient temperature (c) 94 8427 v r = 10 v 100 80 60 40 0.6 0.8 1.0 1.2 1.4 i ra, rel - relative reverse light current t amb - ambient temperature (c) 94 8416 v r = 5 v = 950 nm 0 100 80 60 40 20 0.001 0.01 0.1 1 100 0.01 0.1 1 10 i ra - reverse light current (a) e e - irradiance (mw/cm 2 ) v r = 5 v = 950 nm 10 1 10 100 0.1 1 10 100 v r - rever s e voltage (v) i ra - rever s e light current (a) = 950 nm e e = 1 mw/cm 2
VEMD6110X01 www.vishay.com vishay semiconductors rev. 1.1, 03-jul-15 3 document number: 84179 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - diode capacitance vs. reverse voltage fig. 6 - relative spectral sensitivity vs. wavelength fig. 7 - relative radiant sensitivity vs. angular displacement reflow solder profile fig. 8 - lead (pb)-free reflow solder profile acc. j-std-020 drypack devices are packed in moistu re barrier bags (mbb) to prevent the products from mo isture absorption during transportation and storage. each bag contains a desiccant. floor life floor life (time between soldering and removing from mbb) must not exceed the time indicated on mbb label: floor life: 72 h conditions: t amb < 30 c, rh < 60 % moisture sensitivity level 4, acc. to j-std-020. drying in case of moisture absorpt ion devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry us ing recommended conditions 192 h at 40 c (+ 5 c), rh < 5 %. 0 2 4 6 8 10 12 0.1 1 10 100 v r - reverse voltage (v) 18438 c d - diode capacitance (pf) e = 0 f = 1 mhz 0 0.2 0.4 0.6 0.8 1.0 1.2 600 700 800 900 1000 1100 21554 - wavelength (nm) s ( ) rel - relative spectral sensitivity 0.4 0.2 0 i e, rel - relative radiant sensitivity 94 8013 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 ? - angular displacement 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperature (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp up 3 c/s max. ramp down 6 c/s 19841 255 c
VEMD6110X01 www.vishay.com vishay semiconductors rev. 1.1, 03-jul-15 4 document number: 84179 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters recommended solder pad footprint 4 0.15 1 .0 5 0 .1 5 2.4 0.15 2 0.15 ( 1 ) anode cathode optical center 0 . 4 5 9 7 4.64 2.46 0 . 1 2 0 .8 8 0 . 8 8 1 . 0 2 drawing-no. 6.541-5100.01-4 preliminary issue 04.07.2013 not indicated tolerances 0.1mm technical drawings according to din specification. device center 1 0 . 8 1 0 . 8 1 2 0.15 0 . 1 9 0.745 0.745 0 . 9 7
VEMD6110X01 www.vishay.com vishay semiconductors rev. 1.1, 03-jul-15 5 document number: 84179 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 blister tape dimensions in millimeters
VEMD6110X01 www.vishay.com vishay semiconductors rev. 1.1, 03-jul-15 6 document number: 84179 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 reel dimensions in millimeters 20874
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